Modeling of the New Transient Behavioral Spice Model of IGBTs Including Temperature Effect
نویسنده
چکیده
This paper presents an Analog behavioral model (ABM) of the Insulated Gate Bipolar Transistor (IGBT) with Orcad Pspice 16.5. The Spice model was built using device parameters extracted through experiment. A full study of switching behavior of IGBT during turn-off and turn-on for inductive load with freewheeling diode is presented and simulated. All simulation results presented in this paper are validated, compared and showed good agreement with the measured data. The temperature dependent behavior is simulated and analyzed.
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